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FK330301 - Silicon N-channel MOS FET

Key Features

  • s.
  • Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V).
  • Small size surface mounting package: SSSMini3-F2-B.
  • Contributes to miniaturization of sets, reduction of component count.
  • Eco-friendly Halogen-free package.
  • Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Drain-source surrender voltage VDSS Gate-source surrender voltage VGSS Drain curren.

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Datasheet Details

Part number FK330301
Manufacturer Panasonic
File Size 491.19 KB
Description Silicon N-channel MOS FET
Datasheet download datasheet FK330301 Datasheet

Full PDF Text Transcription for FK330301 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FK330301. For precise diagrams, and layout, please refer to the original PDF.

This product complies with the RoHS Directive (EU 2002/95/EC). FK330301 Silicon N-channel MOS FET For switching circuits  Overview FK330301 is N-channel small signal MOS...

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r switching circuits  Overview FK330301 is N-channel small signal MOS FET employed small size surface mounting package.  Features  Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V)  Small size surface mounting package: SSSMini3-F2-B  Contributes to miniaturization of sets, reduction of component count.

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