FK330301 fet equivalent, silicon n-channel mos fet.
* Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V)
* Small size surface mounting package: SSSMini3-F2-B
* Contributes to miniaturization of se.
(such as office equipment, communications equipment, measuring instruments and household appliances), or for specific ap.
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