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Panasonic Electronic Components Datasheet

FK3F03010L Datasheet

Silicon N-channel MOSFET

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FK3F03010L
Silicon N-channel MOSFET
For switching
FK330301 in ML3 type package
FK3F03010L
Unit: mm
Features
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: X1
Packaging
FK3F03010L Embossed type (Thermo-compression sealing):
10 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 °C
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current
Drain Current (Pulsed)
Total Power Dissipation
Channel Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDp
PD
Tch
Tstg
Rating
30
±12
100
200
100
125
-55 to +150
Unit
V
V
mA
mA
mW
°C
°C
1. Gate
2. Source
3. Drain
Panasonic
JEITA
Code
ML3-N4-B
SC-101
SOT-883
Internal Connection
2 1
3
Pin name
1. Gate
2. Source
3. Drain
Publication date: October 2012
Ver. BED
1


Panasonic Electronic Components Datasheet

FK3F03010L Datasheet

Silicon N-channel MOSFET

No Preview Available !

FK3F03010L
Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source Breakdown Voltage
VDSS ID = 1.0 mA, VGS = 0 V
30
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
1.0
Gate-source Leakage Current
IGSS VGS = ±10 V, VDS = 0 V
±10
Gate-source Threshold Voltage
Vth ID = 1.0 μA, VDS = 3.0 V
0.5 1.0 1.5
Drain-source On-state Resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 10 mA, VGS = 4.0 V
36
23
Forward Transfer Admittance
|Yfs| ID = 10 mA, VDS = 3.0 V
20 55
Input Capacitance
Ciss
12
Output Capacitance
Coss VDS = 3 V, VGS = 0 V, f = 1 MHz
7
Reverse Transfer Capacitance
Crss
3
Turn-on Time *1
VDD = 3 V, VGS = 0 to 3 V,
ton RL = 300 Ω
100
Turn-off Time *1
toff
VDD = 3 V, VGS = 3 to 0 V,
RL = 300 Ω
100
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*1 See Test circuit.
Unit
V
μA
μA
V
Ω
mS
pF
ns
ns
Ver. BED
2


Part Number FK3F03010L
Description Silicon N-channel MOSFET
Maker Panasonic
Total Page 7 Pages
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