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FK8V0304 Datasheet Silicon N-channel MOS FET

Manufacturer: Panasonic

Overview

This product complies with the RoHS Directive (EU 2002/95/EC).

FK8V0304 Silicon N-channel MOS FET For DC-DC converter circuits  Overview N-channel single type, MOS FET in a compact surface mount type package.

Key Features

  • s.
  • Low drain-source ON resistance: RDS(on) typ. = 7 mW (VGS = 10 V).
  • High-speed switching: Qg = 7.2 nC.
  • Small size surface mounting package: WMini8-F1.
  • Contributes to mount area reduction.
  • Eco-friendly Halogen-free package.
  • Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain.