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Panasonic Electronic Components Datasheet

FK8V0305 Datasheet

Silicon N-channel MOS FET

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This product complies with the RoHS Directive (EU 2002/95/EC).
FK8V0305
Silicon N-channel MOS FET
For DC-DC converter circuits
Overview
N-channel single type, MOS FET in a compact surface mount type package.
Features
Low drain-source ON resistance: RDS(on) typ. = 11 mW (VGS = 10 V)
High-speed switching: Qg = 5.1 nC
Small size surface mounting package: WMini8-F1
Contributes to mount area reduction
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current *1
t = 10 s
VDSS
VGSS
ID
33
±20
8
10
V
V
A
Peak drain current *1, 2
Souce current (Body diode)
Power dissipation *1
t = 10 s
IDP
IS
(BD)
PD
32
8
1
1.5
A
A
W
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Note) *1: Mounted on a glass epoxy PC board: 25.4 mm × 25.4 mm × 0.8 mm
*2: Pulse measurement: Channel temperature not to exceed 150°C
°C
°C
Package
Code
WMini8-F1
Pin Name
1: Source
2: Source
3: Source
4: Gate
5: Drain
6: Drain
7: Drain
8: Drain
Marking Symbol: 3E
Internal Connection
(D) (D) (D) (D)
8765
1234
(S) (S) (S) (G)
Publication date: September 2011
Ver. AED
1


Panasonic Electronic Components Datasheet

FK8V0305 Datasheet

Silicon N-channel MOS FET

No Preview Available !

FK8V0305
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1 mA, VGS = 0 V
33
Drain-source cutoff current
IDSS VDS = 33 V, VGS = 0 V
10
Gate-source cutoff current
IGSS VGS = ±16 V, VDS = 0 V
±10
Gate threshold voltage
VTH ID = 0.73 mA, VDS = 10 V
1 2.5
Drain-source ON resistance *1
RDS(on)
ID = 4 A, VGS = 10 V
ID = 4 A, VGS = 4.5 V
11 15
16 25
Short-circuit input capacitance (Common source) Ciss
520
Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0 V, f = 1 MHz
110
Reverse transfer capacitance (Common source)
Turn-on delay time *2
Rise time *2
Turn-off delay time *2
Fall time *2
Crss
td(on)
tr
td(off)
tf
VDD = 15 V, VGS = 0 V to 10 V,
ID = 4 A
VDD = 15 V, VGS = 10 V to 0 V,
ID = 4 A
70
8
4
32
10
Gate charge load
Gate-source charge
Gate-drain charge
Qg
Qgs
VDD = 15 V, VGS = 0 V to 4.5 V,
ID = 8 A
Qgd
5.1
1.8
2.3
Body diode characteristics
Drain-source voltage *1
VSD IS = 4 A, VGS = 0 V
0.8 1.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement: Channel temperature not to exceed 150°C
*2: Measurement circuit
VIN
10 V
0V
PW = 10 µs
Duty Cycle 1%
VIN
50
G
VDD = 15 V
ID = 4 A
D VOUT
S
VIN
VOUT
90%
10%
90%
10%
td(on) tr
td(off) tf
Unit
V
mA
mA
V
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
2 Ver. AED


Part Number FK8V0305
Description Silicon N-channel MOS FET
Maker Panasonic
Total Page 4 Pages
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