FK8V0305 - Silicon N-channel MOS FET

Panasonic

Key Features

s.
Low drain-source ON resistance: RDS(on) typ. = 11 mW (VGS = 10 V).
High-speed switching: Qg = 5.1 nC.
Small size surface mounting package: WMini8-F1.
Contributes to mount area reduction.
Eco-friendly Halogen-free package.
Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain.

FK8V0305 silicon n-channel mos fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	FK8V0305
Manufacturer	Panasonic
File Size	282.66 KB
Description	Silicon N-channel MOS FET
Datasheet	FK8V0305 Datasheet

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Full PDF Text Transcription (Reference)

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This product complies with the RoHS Directive (EU 2002/95/EC). FK8V0305 Silicon N-channel MOS FET For DC-DC converter circuits  Overview N-channel single type, MOS FET in a compact surface mount type package.  Features  Low drain-source ON resistance: RDS(on) typ. = 11 mW (VGS = 10 V)  High-speed switching: Qg = 5.