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Panasonic Electronic Components Datasheet

K2016 Datasheet

Silicon N-Channel Power F-MOS

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Power F-MOS FETs
2SK2016
Silicon N-Channel Power F-MOS
s Features
q Low ON-resistance RDS(on) : RDS(on)1= 0.315(typ)
q High-speed switching : tf= 38ns(typ)
q No secondary breakdown
q For low-voltage drive(VGS= 4V)
q Taping supply possible
s Applications
q DC-DC converter
q Non-contact relay
q Solenoid drive
q Motor drive
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
at 4V drive
Drain current
DC
Pulse
Allowable power
dissipation
TC= 25˚C
Ta=25˚C
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Rating
100
±20
±3
±5
±10
10
0.75
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on) 1
RDS(on) 2
| Yfs |
Ciss
Coss
Crss
ton
tf
td(off)
Condition
VDS= 80V, VGS= 0
VGS= ±20V, VDS= 0
ID=1mA, VGS= 0
VDS=10V, ID=1mA
VGS=10V, ID= 3A
VGS= 4V, ID= 2A
VDS=10V, ID= 3A
VDS=10V, VGS= 0, f= 1MHz
VGS=10V, ID= 3A
VDD= 30V, RL=10
2SK2016
6.5±0.1
5.3±0.1
4.35±0.1
3.0±0.1
Unit : mm
0.85±0.1
4.6±0.1
0.75±0.1 0.5±0.1
0.05 to 0.15
1.0±0.1
123
Marking
1 : Gate
2 : Drain
3 : Source
EIAJ : SC-63
U Type Package
Min Typ Max Unit
10 µ A
±1 µ A
100 V
1 2.5 V
0.315 0.47
0.4 0.6
2.5 3.8
S
416 pF
135 pF
38 pF
26 ns
38 ns
84 ns


Panasonic Electronic Components Datasheet

K2016 Datasheet

Silicon N-Channel Power F-MOS

No Preview Available !

Power F-MOS FETs
2SK2016
PD – Ta
16
(1) TC=Ta
(2) Without heat sink
14 (PD=0.75W)
12
10
8
(1)
6
4
2
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID – VDS
6
VGS=10V
5
4.0V
TC=25˚C
4
3
3.0V
2
1 2.5V
2.0V
0
0 4 8 12 16 20 24
Drain-Source voltage VDS (V)
| Yfs | – ID
6
VDS=10V
TC=25˚C
5
4
3
2
1
0
0123456
Drain current ID (A)
Ciss, Coss, Crss – VDS
10000
3000
f=1MHz
TC=25˚C
1000
300 Ciss
100
Coss
30
10 Crss
3
1
0 20 40 60 80 100
Drain-Source voltage VDS (V)
ton, tf, td(off) – ID
120
VDD=30V
VGS=10V
TC=25˚C
100
td(off)
80
60
40
tf ton
20
0
0123456
Drain current ID (A)
ID – VGS
6
VDS=10V
TC=25˚C
5
4
3
2
1
0
0 2 4 6 8 10
Gate-Source voltage VGS (V)
RDS(on) – ID
1.0
(1)VGS=10V
(2)VGS=4V
TC=25˚C
0.8
0.6
(2)
0.4
(1)
0.2
0
0123456
Drain current ID (A)


Part Number K2016
Description Silicon N-Channel Power F-MOS
Maker Panasonic
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K2016 Datasheet PDF






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