The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power F-MOS FETs
2SK2016
Silicon N-Channel Power F-MOS
s Features
q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltage drive(VGS= 4V) q Taping supply possible
s Applications
q DC-DC converter q Non-contact relay q Solenoid drive q Motor drive
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
at 4V drive
Drain current
DC
Pulse
Allowable power dissipation
TC= 25˚C Ta=25˚C
Channel temperature
Storage temperature
Symbol VDSS VGSS
ID
IDP
PD
Tch Tstg
Rating 100 ±20 ±3 ±5 ±10 10 0.
K2016 Datasheet
