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K2960 - Silicon N-Channel Power F-MOS FET

Features

  • q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 s.

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Datasheet Details

Part number K2960
Manufacturer Panasonic
File Size 172.78 KB
Description Silicon N-Channel Power F-MOS FET
Datasheet download datasheet K2960 Datasheet
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    Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 s Applications 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.6±0.1 0.7±0.
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