K4174 Overview
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product plies with the RoHS Directive (EU 2002/95/EC). 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits.
K4174 Key Features
- Gate-source surrender voltage VGSS : ±25 V guaranteed
- Avalanche energy capability guaranteed: EAS > 216 mJ
- High-speed switching: tf = 90 ns (typ.)