MIP2L70MY - Silicon MOSFET

Datasheet Details

Part number	MIP2L70MY
Manufacturer	Panasonic
File Size	308.81 KB
Description	Silicon MOSFET
Datasheet	MIP2L70MY Datasheet
Additional preview pages of the MIP2L70MY datasheet.

📁 Similar Datasheet

MIP251-10 - MIP25x-10 /16-IQ (euroclamp)
MIP252-10 - MIP25x-10 /16-IQ (euroclamp)
MIP2C2 - High-Performance IPD (Matsushita)
MIP2E1D - High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E2D - High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E3D - High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E4D - High-Performance IPD (Matsushita)
MIP2E4DMY - Silicon MOS IPD (Panasonic Semiconductor)
MIP2E5D - High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E7D - High-Performance IPD for Battery Chaegers (Matsushita)

Other Datasheets by Panasonic

MIP2L30MS - Silicon MOSFET
MIP2L30MTSCF - Silicon MOSFET
MIP2L30MY - Silicon MOSFET
MIP2L40MTSCF - Silicon MOSFET
MIP2L40MY - Silicon MOSFET
MIP2L50MY - Silicon MOSFET
MIP281 - Silicon MOSFET
MIP289 - Silicon MOS type integrated circuit

Full PDF Text Transcription

Click to expand full text

DReovcisNioon. . T1 D4-EA-01925 Product Standards MIP2L70MY Type Application Structure Equivalent Circuit Out Line Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS type Figure．7 TO-220-A2 Marking Ａ．ABSOLUTE MAXIMUM RATINGS （Ta＝25℃±3℃） NO. Item Symbol 1 DRAIN Voltage 2 CONTROL Voltage 3 Output Peak Current 4 Junction Temperature 5 Storage Temperature ＶＤＶＣＩＤP Tj Tstg Ratings －0.3 ～ 700 -0.3 ～ 8 5.0（※１）１50 －55 ～＋１50 MIP2L7MY Unit Note ※１： V It is guaranteed within the pulse as below. V A Leading Edge Blanking Pulse + Current Limit ℃ Delay ton(BLK)＋td(OCL) ℃ B．ELECTRICAL CHARACTERISTICS No.

Published: Sep 29, 2017 |