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(IPD)
MIP3E30MP
MOS
■
• (MIP2ExD • • 50% )
8
9.4±0.3
Unit : mm
+0 0.25 -0.05 .10
7
5
7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2
■
•
1 2 3 4
2.54±0.25
■
VD VC ID IDP IC Tch Tstg 700 8 0.88 1.7 0.1 150 −55 ∼ +150 V V A A A °C °C
0.5±0.1 1.2±0.25
(2,3,7PIN)
1 : Source 2 : Source 3 : Source (1,4,5,8PIN) 4 : Control 5 : Drain 7 : Source 8 : Source DIP8-A1(CF) Package
0.4±0.1 0.6±0.1
: MIP3E3
■
0.6+0.25 -0.01
Control
Drain
S R
Q Q
Max. duty clock
MOSFET S R Q Q
Source
3˚ to 15˚
: 2003
8
SLB00055AJD
1
MIP3E30MP
■ TC = 25°C ± 3°C
fOSC MAXDC PWM
*
VC = VC(CNT) − 0.2 V, VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V VC = VC(CNT) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V
90 45.0
100 47.5 11
110 50.
MIP3E30MP Datasheet
