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Panasonic Electronic Components Datasheet

MIP5530MD Datasheet

Silicon MOS FET

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MIP5530MD
Silicon MOS FET type integrated circuit
Features
Possible to correspond to the output about 30 W by the world wide input.
(with heat sink)
Typical LED peak current : 1.5 A
With built-in LED short-circuit protection function.
Input voltage detecting function is used, and the protection at a low input
voltage is possible.
Possible to correspond to the PWM dimming method and the triac light dimmer.
Over temperature protection for IPD (Auto-restart)
Applications
LED-lighting
HB-LED drive circuit
Absolute Maximum Ratings Ta = 25°C±3°C
Parameter
Symbol Rating
DRAIN voltage
VD-S - 0.3 to +700
VIN voltage
VIN-S - 0.3 to +440
VDD voltage
VDD-S - 0.3 to +8.0
EX voltage
VEX-S - 0.3 to +7.2
CL voltage
VCL-S - 0.3 to +7.2
Peak drain current *
IDP 3.5
Channel temperature
Tch 150
Storage temperature
Tstg -55 to +150
Note) *: IDP is guaranteed at the pulse width narrower than MIN(PW).
Unit
V
V
V
V
V
A
°C
°C
Block Diagram
VDD
VDD(ON)
VDD(UV)
VDD UV
VDD Regulator
ENABLE
EX Current
adjustment
circuit
Toff
clock
Maxon
clock
SQ
RQ
Reset pulse
Package
Code
TO-220IPD7-A2
Pin Name
1. VIN
2. EX
3. CL
4. SOURCE
5. VDD
6.
7. DRAIN
Marking Symbol: MIP553MD
VIN DRAIN
VINuv
Thermal
Shutdown
Gate Driver
Power
MOSFET
Skip
detect
Leading
Edge
Blanking
CL
Current
adjustment
circuit
Drain current
Comparator
SOURCE
Publication date: July 2011
Ver. AEF
1


Panasonic Electronic Components Datasheet

MIP5530MD Datasheet

Silicon MOS FET

No Preview Available !

MIP5530MD
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Control functions
Constant OFF time
Skip mode constant OFF time
Maximum ON time
Toff
Toff_skip
MAXon
VDD = VDD(ON) + 0.1 V, VD = 5 V,
VIN = 50 V, IEX = 0 mA,
ICL = ICLmax + 50 mA
VDD start voltage
VDD stop voltage
VDD(ON) VD = 5 V, VIN = 50 V,
VDD(UV) IEX = 0 mA, ICL = ICLmax + 50 mA
Circuit current before start
VDD = VDD(ON) - 0.2 V, VD = 5 V,
IS1 VIN = 50 V, IEX = 0 mA,
ICL = ICLmax + 50 mA
Circuit current under switching
VDD = VDD(ON) + 0.1 V, VD = 5 V,
IS2 VIN = 50 V, IEX = 0 mA,
ICL = ICLmax + 50 mA
EX pin current for setting ILIMITmin *
IEXH
VDD = VDD(ON) + 0.1 V,
ICL = ICLmax + 50 mA, VIN = 50 V,
ILIMIT = ILIMITmin *Fig. 2
EX pin current at oscillation stop
EX pin current hysteresis at oscillation restart
IEXoff
IEXhys
VDD = VDD(ON) + 0.1 V,
ICL = ICLmax + 50 mA, VIN = 50 V *Fig. 2
VEXM
VDD = VDD(ON) + 0.1 V,
ICL = ICLmax + 50 mA, IEX = 150 mA,
VIN = 50 V
EX pin voltage
VEXH
VDD = VDD(ON) + 0.1 V,
ICL = ICLmax + 50 mA, IEX = IEXH,
VIN = 50 V
VEXoff
VDD = VDD(ON) + 0.1 V,
ICL = I CLmax+50 mA, IEX = IEXoff,
VIN = 50 V
EX pin short current
VDD = VDD(ON) + 0.1 V,
IEXSVDD ICL = ICLmax + 50 mA, VEX = VDD,
VIN = 50 V
IEX0
VDD = VDD(ON) + 0.1 V,
ICL = ICLmax + 50 mA, VEX = 0 V,
VIN = 50 V
CL pin current for setting ILIMITmax
ICLmax
VDD = VDD(ON) + 0.1 V, IEX = 0 mA,
VIN = 50 V, ILIMIT = ILIMITmax *Fig. 3
CL Pin Voltage
VCLmax
VDD = VDD(ON) + 0.1 V, IEX = 0 mA,
VIN = 50 V, ICL = ICLmax
CL pin short current
ICLSVDD
VDD = VDD(ON) + 0.1 V, IEX = 0 mA,
VIN = 50 V, VCL = VDD
ICL0
VDD = VDD(ON) + 0.1 V, IEX = 0 mA,
VIN = 50 V, VCL = 0 V
Note) *: Design guaranteed item
Min
14.4
3.75 ×
Toff
69.6
6.00
5.00
0.61
0.62
300
1.94
2.08
2.43
0.52
264
2.20
0.72
Typ
16
5.0 ×
Toff
80
6.50
5.50
1.02
1.03
260
420
50
2.55
2.75
3.20
0.95
0
300
2.90
1.3
0
Max Unit
17.6
6.25 ×
Toff
90.4
7.00
6.00
ms
ms
ms
V
V
1.43 mA
1.44 mA
mA
560 mA
mA
3.16 V
3.42 V
3.97 V
1.38 mA
mA
336 mA
3.60 V
1.89 mA
mA
2 Ver. AEF


Part Number MIP5530MD
Description Silicon MOS FET
Maker Panasonic
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MIP5530MD Datasheet PDF






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