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MIP5530MD - Silicon MOSFET

Key Features

  • s.
  • Possible to correspond to the output about 30 W by the world wide input. (with heat sink).
  • Typical LED peak current : 1.5 A.
  • With built-in LED short-circuit protection function.
  • Input voltage detecting function is used, and the protection at a low input voltage is possible.
  • Possible to correspond to the PWM dimming method and the triac light dimmer.
  • Over temperature protection for IPD (Auto-restart).

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MIP5530MD Silicon MOS FET type integrated circuit  Features  Possible to correspond to the output about 30 W by the world wide input. (with heat sink)  Typical LED peak current : 1.5 A  With built-in LED short-circuit protection function.  Input voltage detecting function is used, and the protection at a low input voltage is possible.  Possible to correspond to the PWM dimming method and the triac light dimmer.  Over temperature protection for IPD (Auto-restart)  Applications  LED-lighting  HB-LED drive circuit  Absolute Maximum Ratings Ta = 25°C±3°C Parameter Symbol Rating DRAIN voltage VD-S - 0.3 to +700 VIN voltage VIN-S - 0.3 to +440 VDD voltage VDD-S - 0.3 to +8.0 EX voltage VEX-S - 0.3 to +7.2 CL voltage VCL-S - 0.3 to +7.2 Peak drain current * IDP 3.