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MTM68411 Datasheet

Silicon P-channel MOS FET

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This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOS FETs (Small Signal)
MTM68411
Silicon P-channel MOS FET
For load switch circuits
For switching circuits
Overview
MTM68411 is the low ON resistance dual P-channel MOS FET designed for
load switch circuits.
Features
Dual P-channel MOS FET in one package
Low ON resistance: Ron = 23 mW (VGS = -5.0 V)
Small package and surface mounting type: WMini8-F1 (2.8 mm × 2.9 mm ×
1.0 mm)
Low drive voltage: 1.8 V drive
Package
Code
WMini8-F1
Pin Name
1: Source
2: Gate
3: Source
4: Gate
5: Drain
6: Drain
7: Drain
8: Drain
Marking Symbo: 1D
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
VDSS
-12
V
Gate-source surrender voltage
Drain current
VGSS
ID
±8
-4.8
V
A
Peak drain current
Power dissipation *
IDP -19
A
PD 1.0 W
Channel temperature
Tch 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *: In case of being attached to 300 mm2 area or more of copper foil of a drain on
a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm)
PD absolute maximum rating without a heat shink: 400 mW
Internal Connection
(D) (D) (D) (D)
8765
1234
(S) (G) (S) (G)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Drain-source surrender voltage
VDSS ID = -1 mA, VGS = 0
-12
Drain-source cutoff current
IDSS VDS = -10 V, VGS = 0
Gate-source cutoff current
IGSS VGS = ±8 V, VDS = 0
Gate threshold voltage
VTH ID = -1.0 mA, VDS = -6.0 V
- 0.30 - 0.65
Drain-source ON resistance 1
RDS(on)1 ID = -1 A, VGS = -5.0 V
23
Drain-source ON resistance 2
RDS(on)2 ID = - 0.5 A, VGS = -2.5 V
27
Drain-source ON resistance 3
RDS(on)3 ID = - 0.2 A, VGS = -1.8 V
36
Forward transfer admittance
YfsID = -1.0 A, VDS = -10 V
3.5
Short-circuit input capacitance (Common source) Ciss
1 400
Short-circuit output capacitance (Common source) Coss VDS = -10 V, VGS = 0, f = 1 MHz
135
Reverse transfer capacitance (Common source)
Crss
150
Turn-on delay time *
Rise time *
td(on)
tr
VDD = -6 V, VGS = 0 V to -4 V, ID = -1 A
9
11
Turn-off delay time *
Fall time *
td(off)
tf
VDD = -6 V, VGS = -4 V to 0 V, ID = -1 A
270
160
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
Max
- 0.1
±10
-1.00
32
40
60
Publication date: March 2008
SJF00088AED
Unit
V
mA
mA
V
mW
mW
mW
S
pF
pF
pF
ns
ns
ns
ns
1


Panasonic Electronic Components Datasheet

MTM68411 Datasheet

Silicon P-channel MOS FET

No Preview Available !

MTM68411
This product complies with the RoHS Directive (EU 2002/95/EC).
Test circuit
0V
4 V
VIN
PW = 10 µs
Duty Cycle 1%
VIN
50
G
VCC = −6 V
ID = 1 A
RL = 6
D
S
VOUT
VIN
VOUT
10%
90%
90%
td(on)
10%
tr td(off)
tf
2 SJF00088AED


Part Number MTM68411
Description Silicon P-channel MOS FET
Maker Panasonic
Total Page 4 Pages
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