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PNZ154 Datasheet

Silicon planar type Phototransistors

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Phototransistors
This product complies with the RoHS Directive (EU 2002/95/EC).
PNZ154 (PN154)
Silicon planar type
For optical control systems
Features
High sensitivity
Fast response: tr = 4 μs (typ.)
Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs
Small size, thin side-view type package
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-emitter voltage (Base open)
Emitter-collector voltage (Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
VCEO
VECO
IC
PC
Topr
Tstg
20
5
20
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
°C
°C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Photocurrent *1
IL VCE = 10 V, L = 500 lx
1.0
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage *1
ICEO
VCE(sat)
VCE = 10 V
IL = 1 mA, L = 1000 lx
0.01 0.2
0.2 0.5
Peak emission wavelength
λP VCE = 10 V
800
Half-power angle
θ The angle when the photocurrent is halved
27
Rise time *2
Fall time *2
tr
tf
VCC = 10 V, IL = 5 mA, RL = 100 W
4 10
4 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Sig. in
50
VCC
(Input pulse)
Sig. out
RL
(Output pulse)
tr
90%
10%
tf
tr : Rise time
tf : Fall time
Unit
mA
mA
V
nm
°
µs
µs
Publication date: January 2009
Note) The part number in the parenthesis shows conventional part number.
SHE00020DED
1


Panasonic Electronic Components Datasheet

PNZ154 Datasheet

Silicon planar type Phototransistors

No Preview Available !

PNZ154
This product complies with the RoHS Directive (EU 2002/95/EC).
PC Ta
120
100
80
60
40
20
020 0 20 40 60 80 100
Ambient temperature Ta (°C)
ICEO Ta
10 VCE = 10 V
1
101
102
IL VCE
20 Ta = 25°C
T = 2 856K
16
L = 2 000 lx
1 750 lx
12 1 500 lx
1 250 lx
1 000 lx
8
750 lx
4 500 lx
250 lx
100 lx
0
0 4 8 12 16 20 24
Collector-emitter voltage VCE (V)
IL Ta
102 VCE = 10 V
T = 2 856K
L = 1 000 lx
10
500 lx
10340
0
40 80 120
Ambient temperature Ta (°C)
140 0
40 80 120
Ambient temperature Ta (°C)
Directive characteristics
0° 10° 20°
100
80 30°
60
40°
40 50°
60°
20 70°
80°
90°
tr IL
103 VCC = 10 V
Ta = 25°C
102
RL = 1 k
500
10
100
1
101
110022
101 1 10
Photocurrent IL (mA)
102
IL L
102 VCE = 10 V
Ta = 25°C
T = 2 856K
10
1
101
102
103 1
10 102 103
Illuminance L (lx)
104
100 VCE = 10 V
Ta = 25°C
S λ
80
60
40
20
0200 400 600 800 1 000 1 200
Wavelength λ (nm)
tf IL
103 VCC = 10 V
Ta = 25°C
102
RL = 1 k
500
10
100
1
101
102
102
101 1 10
Photocurrent IL (mA)
102
2 SHE00020DED


Part Number PNZ154
Description Silicon planar type Phototransistors
Maker Panasonic
Total Page 4 Pages
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