Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification and driver amplification 5.9±0.2 4.9±0.2
Complementary to 2SC1383, 2SC1384
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SA0683
2SA0684
VCBO
−30
−60
Collector-emitter voltage 2SA0683
(Base open)
2SA0684
VCEO
−25
−50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
−1
−1.5
1
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage
(Emitter open)
2SA0683
2SA0684
VCBO
IC = −10 µA, IE = 0
−30
−60
Collector-emitter voltage
(Base open)
2SA0683
2SA0684
VCEO
IC = −2 mA, IB = 0
−25
−50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −500 mA
85 340
hFE2 VCE = −5 V, IC = −1 A
50
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.4
Base-emitter saturation voltage
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.85 −1.20
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
200
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
20 30
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
85 to 170
120 to 240 170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2004
SJC00001CED
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