2SA0879
2SA0879 is Silicon PNP Transistor manufactured by Panasonic.
Features
- High collector-emitter voltage (Base open) VCEO
0.7+0.3
- 0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating
- 250
- 200
- 5
- 70
- 100 1 150
- 55 to +150 Unit V V V m A m A W °C °C
1 2 3 0.45+0.2
- 0.1 (1.27)
13.5±0.5
0.45+0.2
- 0.1 (1.27)
8.6±0.2
2.54±0.15
1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package
- Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio
- Collector-emitter saturation voltage Transition frequency Collector output capacitance (mon base, input open circuited) Symbol VCEO VEBO h FE VCE(sat) f T Cob Conditions IC =
- 100 µA, IB = 0 IE =
- 1 µA, IC = 0 VCE =
- 10 V, IC =
- 5 m A IC =
- 50 m A, IB =
- 5 m A VCB =
- 10 V, IE = 10 m A, f = 200 MHz VCB =
- 10 V, IE = 0, f = 1 MHz 50 80 5 10 Min
- 200
- 5 60 220
- 1.5 Typ Max Unit V V V MHz p F
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.
- : Rank classification Rank h FE Q 60 to 150 R 100 to 220
Note) The part number in the parenthesis shows conventional part...