• Part: 2SA0879
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 111.52 KB
Download 2SA0879 Datasheet PDF
Panasonic
2SA0879
2SA0879 is Silicon PNP Transistor manufactured by Panasonic.
Features - High collector-emitter voltage (Base open) VCEO 0.7+0.3 - 0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating - 250 - 200 - 5 - 70 - 100 1 150 - 55 to +150 Unit V V V m A m A W °C °C 1 2 3 0.45+0.2 - 0.1 (1.27) 13.5±0.5 0.45+0.2 - 0.1 (1.27) 8.6±0.2 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package - Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio - Collector-emitter saturation voltage Transition frequency Collector output capacitance (mon base, input open circuited) Symbol VCEO VEBO h FE VCE(sat) f T Cob Conditions IC = - 100 µA, IB = 0 IE = - 1 µA, IC = 0 VCE = - 10 V, IC = - 5 m A IC = - 50 m A, IB = - 5 m A VCB = - 10 V, IE = 10 m A, f = 200 MHz VCB = - 10 V, IE = 0, f = 1 MHz 50 80 5 10 Min - 200 - 5 60 220 - 1.5 Typ Max Unit V V  V MHz p F Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. - : Rank classification Rank h FE Q 60 to 150 R 100 to 220 Note) The part number in the parenthesis shows conventional part...