Datasheet4U Logo Datasheet4U.com

2SA1309A - Silicon PNP Transistor

Datasheet Summary

Features

  • q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 60.
  • 50.
  • 7.
  • 200.
  • 100 300 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC.
  • 72 New S Type Package s Electrical Characteristics P.

📥 Download Datasheet

Datasheet preview – 2SA1309A

Datasheet Details

Part number 2SA1309A
Manufacturer Panasonic Semiconductor
File Size 35.71 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA1309A Datasheet
Additional preview pages of the 2SA1309A datasheet.
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 3.0±0.2 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –50 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.
Published: |