2SA1309A
2SA1309A is Silicon PNP Transistor manufactured by Panasonic.
Features q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings
- 60
- 50
- 7
- 200
- 100 300 150
- 55 ~ +150
Unit V V V m A m A m W ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 2.54±0.15
EIAJ:SC- 72 New S Type Package s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO h FE f T Cob
- Conditions VCB =
- 10V, IE = 0 VCE =
- 10V, IB = 0 IC =
- 10µA, IE = 0 IC =
- 2m A, IB = 0 IE =
- 10µA, IC = 0 VCE =
- 10V, IC =
- 2m A IC =
- 50m A, IB =
- 5m A VCB =
- 10V, IE = 1m A, f = 200MHz VCB =
- 10V, IE = 0, f = 1MHz min typ max
- 100
- 1
2.0±0.2
(Ta=25˚C)
0.7±0.1 marking
+0.2 0.45- 0.1 s Absolute Maximum Ratings
15.6±0.5
High foward current transfer ratio h FE. Allowing supply with the radial taping. Optimum for high-density...
