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2SA1532 - Silicon PNP Transistor

Key Features

  • q q 0.425 1.25±0.1 0.425 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings.
  • 30.
  • 20.
  • 5.
  • 30 150 150.
  • 55 ~ +150 Unit V V V mA mW ˚C ˚C 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dis.

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Datasheet Details

Part number 2SA1532
Manufacturer Panasonic
File Size 37.84 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA1532 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 2.1±0.1 Unit: mm s Features q q 0.425 1.25±0.1 0.425 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –30 –20 –5 –30 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 0.2 0.9±0.1 0.7±0.1 0 to 0.1 0.2±0.