2SA777
Overview
- 45-0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions VCB = -20V, IE = 0 IC = -10µA, IE = 0 IC = -100µA, IB = 0 IE = -10µA, IC = 0 VCE = -10V, IC = -150mA VCE = -5V, IC = -500mA IC = -300mA, IB = -30mA IC = -300mA, IB = -30mA VCB = -10V, IE = 50mA, f = 100MHz VCB = -10V, IE = 0, f = 1MHz min typ
- 2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package max - 0.1 Unit µA V V V -80 -80 -5 90 50 100 - 0.2 - 0.85 120 11 20 - 0.4 -1.2 220 V V MHz pF
- h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 Rank hFE1 1 Transistor PC - Ta
- 2 -1.2 Ta=25˚C 2SA777 IC - VCE -1.2 VCE=-10V Ta=25˚C -1.0 IC - IB Collector power dissipation PC (W)
- 0 -1.0 IB=-10mA Collector current IC (A)
- 8 - 0.8 -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA
- 6 - 0.6
- 4 - 0.4
- 2 - 0.2
