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Panasonic Electronic Components Datasheet

2SA777 Datasheet

Silicon NPN Transistor

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Transistor
2SA777
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1509
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–80
–80
–5
–1
– 0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 100MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
– 0.1 µA
–80 V
–80 V
–5 V
90 220
50 100
– 0.2 – 0.4
V
– 0.85 –1.2
V
120 MHz
11 20 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 90 ~ 155 130 ~ 220
1


Panasonic Electronic Components Datasheet

2SA777 Datasheet

Silicon NPN Transistor

No Preview Available !

Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA777
IC — IB
–1.2
–1.0
VCE=–10V
Ta=25˚C
– 0.8
– 0.6
– 0.4
– 0.2
0
0 –2 –4 –6 –8 –10
Base current IB (mA)
VCE(sat) — IC
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
25˚C
Ta=75˚C
–25˚C
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
fT — IE
200 VCB=–10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
25˚C
75˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
hFE — IC
300
VCE=–10V
250
200 Ta=75˚C
25˚C
150
–25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
ICBO — Ta
104
VCB=–20V
103
102
10
1
0 60 120 180
Ambient temperature Ta (˚C)
2


Part Number 2SA777
Description Silicon NPN Transistor
Maker Panasonic Semiconductor
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2SA777 Datasheet PDF






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