Power Transistors
2SA0794 (2SA794), 2SA0794A (2SA794A)
Silicon PNP epitaxial planar type
For low-frequency output driver
Complementary to 2SC1567, 2SC1567A
■ Features
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SA0794 VCBO
2SA0794A
−100
−120
Collector-emitter voltage 2SA0794 VCEO
(Base open)
2SA0794A
−100
−120
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
− 0.5
−1
1.2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-emitter voltage
(Base open)
2SA0794 VCEO
2SA0794A
IC = −100 µA, IB = 0
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = −1 µA, IC = 0
VCE = −10 V, IC = −150 mA
VCE = −5 V, IC = −500 mA
IC = −500 mA, IB = −50 mA
IC = −500 mA, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
−100
−120
−5
90
50
Typ
100
− 0.2
− 0.85
120
20
Max
220
− 0.4
−1.20
30
Unit
V
V
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
Publication date: February 2003
Note) The part numbers in the parenthesis show conventional part number.
SJD00001BED
1
