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2SB931 - PNP Transistor

Key Features

  • q q q q 1.5±0.1 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings.
  • 130.
  • 80.
  • 7.
  • 6.
  • 3 30 1.3 150.
  • 55 to +150 Unit V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Rati.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB931 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1254 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q q 1.5±0.1 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –130 –80 –7 –6 –3 30 1.3 150 –55 to +150 Unit V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.