Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
0.7±0.2 12.9±0.5
0.7±0.1.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
30
V
0.45+.
00..115
0.45+.
00..115
e Collector-emitter voltage (Base open) VCEO
20
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
30
mA
2.3±0.2
le sta ntinu Collector power dissipation
PC
40.
Full PDF Text Transcription for 2SC0829 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC0829. For precise diagrams, and layout, please refer to the original PDF.
Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ■ Features • Optimum for RF amplification...
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: mm 5.0±0.2 4.0±0.2 5.1±0.2 ■ Features • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V 0.45+–00..115 0.45+–00..115 e Collector-emitter voltage (Base open) VCEO 20 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 30 mA 2.3±0.2 le sta ntinu Collector power dissipation PC 400 mW a e cyc isco Junction temperature Tj 150 °C life d, d Storage temperature Tstg −55 to +150 °C 2.5+–00..26 2.5+–00..
2SC0829 Datasheet
