5.5±0.2
2.7±0.2
4.2±0.2
16.7±0.3 7.5±0.2
q High-speed switching
q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with
/ one screw
φ3.1±0.1 1.3±0.2
1.4±0.1
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
14.0±0.5 Solder Dip 4.0
n d tage. ued Collector to base voltage
VCBO
500
V
a e cle s contin Collector to emitter voltage
VCES
500
V
cy is VCEO
400
V
n u t lif.
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Power Transistors
2SC3870
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
10.0±0.2
4.2±0.2
s Features
5.5±0.2
2.7±0.2
4.2±0.2
16.7±0.3 7.5±0.2
q High-speed switching
q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with
/ one screw
φ3.1±0.1 1.3±0.2
1.4±0.1
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
14.0±0.5 Solder Dip 4.0
n d tage.
2SC3870 Datasheet
