Transistor
2SC4805
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
s Features
q High transition frequency fT.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
2
65
150
150
–55 ~+150
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 3S
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
ICBO
IEBO
hFE
fT
Cob
| S21e |2
GUM
NF
Conditions
VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 200mA*
VCE = 8V, IC = 15mA, f = 1.5GHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 15mA, f = 1.5GHz
VCE = 8V, IC = 15mA, f = 1.5GHz
VCB = 8V, IC = 7mA, f = 1.5GHz
min typ max Unit
1 µA
1 µA
50 120 300
7.0 8.5
GHz
0.6 1 pF
79
dB
10 dB
2.2 3 dB
* Pulse measurement
1
