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2SD1820A Datasheet

Silicon NPN epitaxial planer type Transistor

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Transistors
2SD1820A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1219A
I Features
Low collector to emitter saturation voltage VCE(sat)
S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
50
5
1
500
150
150
55 to +150
Unit
V
V
V
A
mA
mW
°C
°C
0.3+–00..01
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Unit: mm
0.15+–00..0150
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
Marking Symbol: X
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Transition frequency *1
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = 20 V, IE = 0
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Rank
Q
R
S No-rank
hFE1
Marking symbol
85 to 170
XQ
120 to 240
XR
170 to 340
XS
85 to 340
X
Product of no-rank is not classified and have no indication for rank.
Min
60
50
5
85
40
Typ Max
0.1
340
0.35 0.6
200
6 15
Unit
µA
V
V
V
V
MHz
pF
1


Panasonic Electronic Components Datasheet

2SD1820A Datasheet

Silicon NPN epitaxial planer type Transistor

No Preview Available !

2SD1820A
Transistors
PC Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
800
Ta = 25°C
700
IB = 10 mA
9 mA
600 8 mA
7 mA
6 mA
500 5 mA
4 mA
400 3 mA
300 2 mA
200 1 mA
100
0
0 4 8 12 16 20
Collector to emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
30
10
3
1
Ta = 75°C
0.3
25°C
0.1 25°C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
VBE(sat) IC
100 IC / IB = 10
30
10
3
25°C
1 Ta = −25°C
75°C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT IE
240
VCB = 10 V
Ta = 25°C
200
160
120
80
40
0
1 2 3 5 10 2030 50 100
Emitter current IE (mA)
Cob VCB
12
IE = 0
f = 1 MHz
10 Ta = 25°C
8
6
4
2
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
800
700
600
500
400
300
200
100
0
0
IC IB
VCE = 10 V
Ta = 25°C
2468
Base current IB (mA)
10
hFE IC
300
VCE = 10 V
250
Ta = 75°C
200 25°C
150 25°C
100
50
0
0.01 0.03 0.1 0.3 1
3
Collector current IC (A)
10
VCER RBE
120
IC = 2 mA
Ta = 25°C
100
80
60
40
20
0
1 3 10 30 100 300 1 000
Base to emitter resistance RBE (k)
2


Part Number 2SD1820A
Description Silicon NPN epitaxial planer type Transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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