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2SD2621 Datasheet

Silicon NPN epitaxial planar type

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Transistors
2SD2621
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
High emitter-base voltage (Collector open) VEBO
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
100
100
15
20
50
100
125
55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
0.33+–00..0025
3
Unit: mm
0.10+–00..0025
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
Marking Symbol: 3B
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
NV
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 60 V, IE = 0
VCE = 60 V, IB = 0
VCE = 10 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 k, Function = FLAT
100
100
15
400
0.1
1.0
1 200
0.05 0.20
200
80
V
V
V
µA
µA
V
MHz
mV
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
www.DataSheet4U.com
Publication date: June 2004
SJC00307AED
1


Panasonic Electronic Components Datasheet

2SD2621 Datasheet

Silicon NPN epitaxial planar type

No Preview Available !

2SD2621
PC Ta
120
100
80
60
40
20
0
0 40 80 120
Ambient temperature Ta (°C)
IC VCE
45
Ta = 25°C
40
IB = 100 µA
35
90 µA
80 µA
70 µA
60 µA
50 µA
30 40 µA
25
30 µA
20
15 20 µA
10
10 µA
5
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 10
Ta = 85°C
25°C
0.1
25°C
0.01
0.1
1 10 100 1000
Collector current IC (mA)
IC VBE
120
VCE = 10 V
25°C
100
80
Ta = 85°C
60
40
25°C
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
1 000
800
hFE IC
Ta = 85°C
VCE = 10 V
25°C
600 25°C
400
200
0
1 10 100
Collector current IC (mA)
Cob VCB
10
f = 1 MHz
Ta = 25°C
1
0 10 20 30 40
Collector-base voltage VCB (V)
www.DataSheet4U.com
2 SJC00307AED


Part Number 2SD2621
Description Silicon NPN epitaxial planar type
Maker Panasonic Semiconductor
Total Page 3 Pages
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