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2SK0065 - Silicon N-Channel Junction FET

Datasheet Summary

Features

  • G Diode is connected between gate and source G Low noise voltage I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12.
  • 12 2 2 2 20.
  • 10 to +70.
  • 20 to +150 Unit V V mA mA mA mW °C °C 1 2 3 0.45+0.20.
  • 0.10 (2.5) (2.5) 0.45+0.

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Datasheet Details

Part number 2SK0065
Manufacturer Panasonic Semiconductor
File Size 74.17 KB
Description Silicon N-Channel Junction FET
Datasheet download datasheet 2SK0065 Datasheet
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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 −12 2 2 2 20 −10 to +70 −20 to +150 Unit V V mA mA mA mW °C °C 1 2 3 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 (0.8) 0.75 max. 7.
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