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2SK0123 - Silicon N-Channel MOSFET

Features

  • q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20.
  • 0.05 10˚ Unit: mm 0.40+0.10.
  • 0.05 3 0.16+0.10.
  • 0.06 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr T.

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Datasheet Details

Part number 2SK0123
Manufacturer Panasonic
File Size 46.66 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK0123 Datasheet
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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ Unit: mm 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C 1.1+0.2 –0.1 (0.65) 0 to 0.1 1.1+0.3 –0.
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