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2SK0198 - Silicon N-Channel MOSFET

Features

  • q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 3 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20.
  • 0.05 10˚ 1.1+0.2.
  • 0.1 Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO ID IG PD Tch Tstg 30.
  • 30 20 10 150 150.
  • 55.

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Datasheet Details

Part number 2SK0198
Manufacturer Panasonic
File Size 49.88 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK0198 Datasheet
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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.10 –0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 3 1.50+0.25 –0.05 2.8+0.2 –0.3 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ 1.1+0.2 –0.1 Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO ID IG PD Tch Tstg 30 −30 20 10 150 150 −55 to +150 V V mA mA mW °C °C 1: Source 2: Drain 3: Gate 0 to 0.1 Parameter Symbol Ratings Unit 1.1+0.3 –0.1 s Absolute Maximum Ratings (Ta = 25°C) (0.
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