* 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 5
2SK0657
Panasonic Semiconductor
77.93 KB
Silicon n-channel mosfet.
Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2.
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