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2SK0663 - Silicon N-Channel Junction FET

Features

  • 3 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55.
  • 55.
  • 55 30 10 150 125.
  • 55 to +125 Unit V V V mA mA mW °C °C 10° 1: Source 2: Drain 3: Gate 0 to 0.1 0.9±0.1 0.9+0.2.
  • 0.1 EIAJ: SC-70 SMini3-G1 Package Marking Sym.

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Datasheet Details

Part number 2SK0663
Manufacturer Panasonic
File Size 73.40 KB
Description Silicon N-Channel Junction FET
Datasheet download datasheet 2SK0663 Datasheet
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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching 0.3+0.1 –0.0 unit: mm (0.425) 0.15+0.10 –0.05 I Features 3 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 30 10 150 125 −55 to +125 Unit V V V mA mA mW °C °C 10° 1: Source 2: Drain 3: Gate 0 to 0.1 0.9±0.1 0.9+0.2 –0.
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