2SK0665 Datasheet PDF (Silicon MOS FETs) | Download Panasonic Semiconductor 2SK0665

2SK0665 - Silicon MOS FETs

Features

0.3+0.1.
0.0 3 0.15+0.10.
0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150.
55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2.
0.1 I Absolute Maximum Ratings (Ta = 25°C) EIAJ: SC-70 SMini3-G1 Pack.

Datasheet Details

Part number	2SK0665
Manufacturer	Panasonic
File Size	79.46 KB
Description	Silicon MOS FETs
Datasheet	2SK0665 Datasheet
Additional preview pages of the 2SK0665 datasheet.

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Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET unit: mm (0.425) For switching I Features 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2 –0.

Published: Jan 6, 2006 |