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2SK65 - Silicon N-Channel Junction FET

This page provides the datasheet information for the 2SK65, a member of the 2SK0065 Silicon N-Channel Junction FET family.

Features

  • G Diode is connected between gate and source G Low noise voltage I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12.
  • 12 2 2 2 20.
  • 10 to +70.
  • 20 to +150 Unit V V mA mA mA mW °C °C 1 2 3 0.45+0.20.
  • 0.10 (2.5) (2.5) 0.45+0.

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Datasheet Details

Part number 2SK65
Manufacturer Panasonic
File Size 74.17 KB
Description Silicon N-Channel Junction FET
Datasheet download datasheet 2SK65 Datasheet
Additional preview pages of the 2SK65 datasheet.

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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 −12 2 2 2 20 −10 to +70 −20 to +150 Unit V V mA mA mA mW °C °C 1 2 3 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 (0.8) 0.75 max. 7.
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