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2SK655 - Silicon N-Channel MOSFET

This page provides the datasheet information for the 2SK655, a member of the 2SK0655 Silicon N-Channel MOSFET family.

Features

  • 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150.
  • 55 to +150 Unit V V mA mA mW °C °C 0.45+0.20.
  • 0.10 (2.5) (2.5) 0.45+0.20.
  • 0.10 0.7±0.1 15.6±0.5 G High-speed switching G Allowing to supply with the radial taping (0.8).

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Datasheet preview – 2SK655

Datasheet Details

Part number 2SK655
Manufacturer Panasonic
File Size 76.37 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK655 Datasheet
Additional preview pages of the 2SK655 datasheet.

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Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching I Features 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 G High-speed switching G Allowing to supply with the radial taping (0.8) 7.
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