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2SK656 - Silicon N-Channel MOSFET

This page provides the datasheet information for the 2SK656, a member of the 2SK0656 Silicon N-Channel MOSFET family.

Features

  • I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150.
  • 55 to +150 Unit V V mA mA mW °C °C 0.45+0.20.
  • 0.10 (2.5) (2.5) 0.45+0.20.
  • 0.10 0.7±0.1 1 15.6±0.5 G High-speed switching G Small drive current owing to high input inpedance G High electrostatic break.

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Datasheet Details

Part number 2SK656
Manufacturer Panasonic
File Size 76.87 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK656 Datasheet
Additional preview pages of the 2SK656 datasheet.

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Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 1 15.6±0.5 G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage 2 3 (0.8) 0.75 max. 7.
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