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2SK657 - Silicon N-Channel MOSFET

This page provides the datasheet information for the 2SK657, a member of the 2SK0657 Silicon N-Channel MOSFET family.

Features

  • 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150.
  • 55 to +150 Unit V V mA mA mW °C °C 1 (2.5) 2 (2.5) 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package Internal Connection D G S I Electrical Characteristics (Ta.

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Datasheet Details

Part number 2SK657
Manufacturer Panasonic
File Size 77.93 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK657 Datasheet
Additional preview pages of the 2SK657 datasheet.

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Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2 2.4±0.2 (1.5) (1.5) I Features 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150 −55 to +150 Unit V V mA mA mW °C °C 1 (2.5) 2 (2.
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