2SK664 fet equivalent, silicon n-channel mos fet.
(0.425)
0.3+0.1
–0.0 3
0.15+0.10
–0.05
1.25±0.10
(0.65) (0.65) 1.3±0.1 2.0±0.2 10°
Parameter Drain to Source breakdown voltage Gate .
or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household.
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