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2SK664 - Silicon N-Channel MOS FET

This page provides the datasheet information for the 2SK664, a member of the 2SK0664 Silicon N-Channel MOS FET family.

Features

  • (0.425) 0.3+0.1.
  • 0.0 3 0.15+0.10.
  • 0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150.
  • 55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2.
  • 0.1 I Absolute Maximum Ratings (Ta = 25°C) EIAJ:.

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Datasheet preview – 2SK664

Datasheet Details

Part number 2SK664
Manufacturer Panasonic
File Size 76.12 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet 2SK664 Datasheet
Additional preview pages of the 2SK664 datasheet.

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Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit: mm For switching I Features (0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2 –0.
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