B1253 Datasheet 2SB1253

Manufacturer: Panasonic

Datasheet Details

Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 12.5 3.5 15.0±0.2 0.

q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <.
2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.2 Collector to base voltage Collector to emitter voltage Emitter to.

Part Number	Description
B1254	2SB1254