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Panasonic Electronic Components Datasheet

B745 Datasheet

2SB745

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Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SB745
base voltage 2SB745A
Collector to 2SB745
emitter voltage 2SB745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SB745
2SB745A
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
–100 nA
–1 µA
–35
V
–55
Collector to emitter 2SB745
voltage
2SB745A
VCEO
IC = –2mA, IB = 0
–35
–55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
VEBO
hFE*
VCE(sat)
VBE
fT
Noise voltage
NV
IE = –10µA, IC = 0
–5
V
VCB = –5V, IE = 2mA
180 700
IC = –100mA, IB = –10mA
– 0.6
V
VCE = –1V, IC = –100mA
– 0.7 –1
V
VCB = –5V, IE = 2mA, f = 200MHz
150 MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1


Panasonic Electronic Components Datasheet

B745 Datasheet

2SB745

No Preview Available !

Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–800
–700
IB — VBE
VCE=–5V
Ta=25˚C
–600
–500
–400
–300
–200
–100
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
Ta=75˚C
400
25˚C
300 –25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
–160
–140
–120
–100
–80
–60
–40
–20
IC — VCE
Ta=25˚C
IB=–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB745, 2SB745A
–160
–140
IC — IB
VCE=–5V
Ta=25˚C
–120
–100
–80
–60
–40
–20
0
0 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5
Base current IB (mA)
–120
–100
–80
IC — VBE
25˚C
Ta=75˚C –25˚C
VCE=–5V
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
500 VCB=–5V
450 Ta=25˚C
400
350
300
250
200
150
100
50
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.1 – 0.3 – 1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
20
IE=0
18 f=1MHz
Ta=25˚C
16
14
12
10
8
6
4
2
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
2


Part Number B745
Description 2SB745
Maker Panasonic Semiconductor
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B745 Datasheet PDF






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