q High emitter to base voltage VEBO. q Protective diodes and resistances between emitter and base can
be omitted. 5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
13.5±0.5
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
B774. For precise diagrams, and layout, please refer to the original PDF.
Transistor 2SB774 Silicon PNP epitaxial planer type For low-frequency amplification s Features q High emitter to base voltage VEBO. q Protective diodes and resistances be...
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h emitter to base voltage VEBO. q Protective diodes and resistances between emitter and base can be omitted. 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 13.5±0.5 s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.
B774 Datasheet
