C1047 - Silicon NPN Transistor

Features

5.1±0.2.
Optimum for RF amplification of FM/AM radios.
High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1.
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collector-emitter voltage (Base open) VCEO 20 V c type) Emitter-base voltage (Collector open) VEBO 3 V n d ge. ed Collector current IC 20 mA 2.3±0.2 le sta ntinu Collector power dissipation PC 400 mW a e cyc isco Junction t.

C1047 silicon npn transistor by Panasonic Semiconductor - Datasheet Preview

Datasheet Details

Part number	C1047
Manufacturer	Panasonic
File Size	261.83 KB
Description	Silicon NPN Transistor
Datasheet	C1047 Datasheet

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Full PDF Text Transcription

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Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 ■ Features 5.1±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collector-emitter voltage (Base open) VCEO 20 V c type) Emitter-base voltage (Collector open) VEBO 3 V n d ge. ed Collector current IC 20 mA 2.3±0.2 le sta ntinu Collector power dissipation PC 400 mW a e cyc isco Junction temperature Tj 150 °C life d, d Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..

Published: Mar 10, 2015 |