C1215 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Datasheet Details

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.

q High transition frequency fT. 13.5±0.5 / s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit e e) Collector to base voltage VCBO 30 V c e. d typ Collector to emitter voltage VCEO 20 V n d stag tinue Emitter to base voltage VEBO 2.3±0.2 3 V le on Collector current IC 50 mA a elifecyc , disc Collector power dissipation PC 400 mW n u ct ped Junction temperature Tj 150 ˚C rodu d ty Storage temperature Tstg.
55 ~ +150 ˚C +0.2 0.45.

Part Number	Description
C1226	Silicon NPN Power Transistors