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C1980 - 2SC1980

Key Features

  • High collector-emitter voltage (Base open) VCEO.
  • Low noise voltage NV 0.7±0.1.
  • Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO 120 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 2.3±0.2 V le sta ntinu Collector current IC 20 mA a e cyc isco Peak collector current ICP 50 mA life d, d Collector power d.

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Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO 120 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 2.3±0.2 V le sta ntinu Collector current IC 20 mA a e cyc isco Peak collector current ICP 50 mA life d, d Collector power dissipation PC 250 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.45+–00.