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Panasonic Electronic Components Datasheet

C1980 Datasheet

2SC1980

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Transistor
2SC1980
Silicon NPN epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SA921
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
120
120
7
50
20
250
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
IC = 10µA, IE = 0
0.1 µA
1 µA
120 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
120 V
7V
180 700
Collector to emitter saturation voltage VCE(sat)
IC = 20mA, IB = 2mA
0.6 V
Transition frequency
fT VCB = 5V, IE = –2mA, f = 200MHz
200 MHz
Noise voltage
VCE = 40V, IC = 1mA, GV = 80dB
NV
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1


Panasonic Electronic Components Datasheet

C1980 Datasheet

2SC1980

No Preview Available !

Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
8
IE=0
7 f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
24
Ta=25˚C
20
IB=50µA
45µA
40µA
16
35µA
30µA
12
25µA
20µA
8
15µA
4 10µA
5µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1200
1000
hFE — IC
VCE=10V
800
Ta=75˚C
600 25˚C
–25˚C
400
200
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NV — IC
160
VCE=10V
140 GV=80dB
Function=FLAT
120
100
80 Rg=100k
60
22k
40
4.7k
20
0
0.01 0.03 0.1 0.3
1
Collector current IC (mA)
2SC1980
IC — VBE
60
VCE=10V
25˚C
50
Ta=75˚C
40
–25˚C
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
800
VCB=5V
Ta=25˚C
700
600
500
400
300
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2


Part Number C1980
Description 2SC1980
Maker Panasonic Semiconductor
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C1980 Datasheet PDF





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