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Panasonic Electronic Components Datasheet

C2406 Datasheet

2SC2406

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C2406 pdf
Transistor
2SC2405, 2SC2406
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1034 and 2SA1035
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
Parameter
Symbol
Ratings
Collector to 2SC2405
base voltage 2SC2406
VCBO
35
55
Collector to 2SC2405
emitter voltage 2SC2406
VCEO
35
55
Emitter to base voltage
VEBO
5
Peak collector current
ICP
100
Collector current
IC
50
Collector power dissipation PC
200
Junction temperature
Tj
150
Storage temperature
Tstg –55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
mA
mA
mW
˚C
˚C
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : S(2SC2405)
T(2SC2406)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SC2405
2SC2406
ICBO
ICEO
VCBO
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
100 nA
1 µA
35
V
55
Collector to emitter 2SC2405
voltage
2SC2406
VCEO
IC = 2mA, IB = 0
35
55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*hFE Rank classification
VEBO
hFE*
VCE(sat)
VBE
fT
NV
IE = 10µA, IC = 0
5
V
VCB = 5V, IE = –2mA
180 700
IC = 100mA, IB = 10mA
0.6 V
VCE = 1V, IC = 100mA
0.7 1
V
VCB = 5V, IE = –2mA, f = 200MHz
200 MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
110 mV
Rank
RST
hFE
Marking 2SC2405
Symbol 2SC2406
180 ~ 360
SR
TR
260 ~ 520
SS
TS
360 ~ 700
ST
TT
1
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Panasonic Electronic Components Datasheet

C2406 Datasheet

2SC2406

No Preview Available !

C2406 pdf
Transistor
PC — Ta
250
225
200
175
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VBE
120
25˚C
VCE=5V
100
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
500 VCB=5V
450 Ta=25˚C
400
350
300
250
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
IC — VCE
160
Ta=25˚C
140
120 IB=350µA
300µA
100
250µA
80 200µA
60 150µA
100µA
40
02 50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC2405, 2SC2406
IC — IB
160
VCE=5V
Ta=25˚C
140
120
100
80
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5
Base current IB (mA)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
0.1 25˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
10
IE=0
9 f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
hFE — IC
1000
900
VCE=5V
800
700
600
500 Ta=75˚C
400 25˚C
–25˚C
300
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NV — VCE
160
IC=1mA
140 GV=80dB
Function=FLAT
120
Rg=100k
100
80
60 22k
40
4.7k
20
0
1
3
10 30
100
Collector to emitter voltage VCE (V)
2
Free Datasheet http://www.datasheet4u.net/


Part Number C2406
Description 2SC2406
Maker Panasonic Semiconductor
Total Page 3 Pages
PDF Download
C2406 pdf
C2406 Datasheet PDF
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