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Panasonic Electronic Components Datasheet

C3979 Datasheet

2SC3979

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Power Transistors
2SC3979, 2SC3979A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC3979
base voltage 2SC3979A
VCBO
900
1000
Collector to 2SC3979
emitter voltage 2SC3979A
VCES
900
1000
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
800
7
5
3
1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
5.08±0.5
1.7±0.2
1.05±0.1
0.8±0.1
2.54±0.3
1.3±0.2
+0.2
0.5–0.1
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SC3979
current
2SC3979A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
50
µA
50
VEB = 7V, IC = 0
50 µA
IC = 10mA, IB = 0
800
V
VCE = 5V, IC = 0.1A
8
VCE = 5V, IC = 0.8A
6
IC = 0.8A, IB = 0.16A
1.5 V
IC = 0.8A, IB = 0.16A
1.5 V
VCE = 5V, IC = 0.15A, f = 1MHz
10 MHz
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V
0.7 µs
2.5 µs
0.3 µs
1


Panasonic Electronic Components Datasheet

C3979 Datasheet

2SC3979

No Preview Available !

Power Transistors
60
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
1 TC=–25˚C
25˚C
100˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
6
TC=25˚C
5
4
IB=900mA
3
800mA
700mA
600mA
500mA
400mA
2 300mA
200mA
1 100mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1000
300
100
30
10
hFE — IC
VCE=5V
TC=100˚C 25˚C
–25˚C
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10 VCC=200V
TC=25˚C
3 tstg
1
0.3 ton
tf
0.1
0.03
0.01
0
0.4 0.8 1.2 1.6
Collector current IC (A)
2SC3979, 2SC3979A
VCE(sat) — IC
100
IC/IB=5
30
10
3
1
0.3
0.1 TC=100˚C
0.03
25˚C
–25˚C
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IC
100
VCE=5V
f=1MHz
30 TC=25˚C
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
1
10ms
DC
0.3
t=1ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C3979
Description 2SC3979
Maker Panasonic Semiconductor
Total Page 3 Pages
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