Power Transistors
2SC3979, 2SC3979A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC3979
base voltage 2SC3979A
VCBO
900
1000
Collector to 2SC3979
emitter voltage 2SC3979A
VCES
900
1000
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
800
7
5
3
1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
5.08±0.5
1.7±0.2
1.05±0.1
0.8±0.1
2.54±0.3
1.3±0.2
+0.2
0.5–0.1
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SC3979
current
2SC3979A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
50
µA
50
VEB = 7V, IC = 0
50 µA
IC = 10mA, IB = 0
800
V
VCE = 5V, IC = 0.1A
8
VCE = 5V, IC = 0.8A
6
IC = 0.8A, IB = 0.16A
1.5 V
IC = 0.8A, IB = 0.16A
1.5 V
VCE = 5V, IC = 0.15A, f = 1MHz
10 MHz
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V
0.7 µs
2.5 µs
0.3 µs
1
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