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Panasonic Electronic Components Datasheet

C4111 Datasheet

2SC4111

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Power Transistors
2SC4111
Silicon NPN triple diffusion planar type
For horizontal deflection output
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
1500
1500
700
7
22
10
3.5
150
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
VEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 750V, IE = 0
VCB = 1500V, IE = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 2.5A
IC = 7A, IB = 2.5A
VCE = 10V, IC = 1A, f = 0.5MHz
IC = 6A, Lleak = 5µH,
IB1 = 1.7A, IB2 = –1.7A
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min typ max Unit
10 µA
1 mA
7V
5
38
5V
1.5 V
2 MHz
12 µs
0.6 µs
1


Panasonic Electronic Components Datasheet

C4111 Datasheet

2SC4111

No Preview Available !

Power Transistors
200
(1)
150
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
100
50
(2) (3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=2.8
30
10
3
1 TC=–25˚C
100˚C
0.3 25˚C
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
12
TC=25˚C
10
IB=2A
8
1A
6
0.7A
0.5A
4
0.2A
2 0.1A
0.05A
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1000
300
100
hFE — IC
VCE=5V
30 TC=100˚C
25˚C
10 –25˚C
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
30 ICP
IC
10
Non repetitive pulse
TC=25˚C
t=1ms
10ms
3
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2SC4111
VCE(sat) — IC
100
IC/IB=2.8
30
10
3 TC=100˚C
1 25˚C
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IC
100
VCE=10V
f=0.5MHz
30 TC=25˚C
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation, horizontal operation ASO
40
35
30
25
ICP
20
f=15.75kHz, TC=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
15
10
5
<1mA
0
0 200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
2


Part Number C4111
Description 2SC4111
Maker Panasonic Semiconductor
Total Page 3 Pages
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