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Panasonic Electronic Components Datasheet

C5121 Datasheet

2SC5121

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Power Transistors
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2SC5121
Silicon NPN triple diffusion planar type
For general amplification
Features
High collector-base voltage (Emitter open) VCBO
High collector-emitter voltage (Base open) VCEO
Small collector output capacitance (Common base, input open
circuited) Cob
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
400
400
7
70
100
1.2
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
400
V
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7V
Collector-base cutoff current (Emitter open) ICBO VCB = 300 V, IE = 0
10 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 380 V, IB = 0, Ta = 80°C
10 µA
Forward current transfer ratio *
hFE VCE = 10 V, IC = 5 mA
30 100
Collector-emitter saturation voltage * VCE(sat) IC = 50 mA, IB = 5 mA
1.2 V
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
4 8 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00140BED
1


Panasonic Electronic Components Datasheet

C5121 Datasheet

2SC5121

No Preview Available !

2SC5121
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PC Ta
2.4
Without heat sink
2.0
1.6
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
120
TC=25˚C
100
80
IB=1.2mA
1.0mA
0.8mA
60
0.6mA
0.4mA
40
20 0.2mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
120
VCE=10V
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
10
IC/IB=10
1
0.1
0.01
0.001
0.1
1 10
Collector current IC (mA)
100
hFE IC
104
VCE=10V
103
102
10
1
0.1 1 10 100
Collector current IC (mA)
Cob VCB
12
IE=0
f=1MHz
TC=25˚C
10
8
6
4
2
0
1 10 100 1 000
Collector-base voltage VCB (V)
2 SJD00140BED


Part Number C5121
Description 2SC5121
Maker Panasonic Semiconductor
PDF Download

C5121 Datasheet PDF






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