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Panasonic Electronic Components Datasheet

C5904 Datasheet

2SC5904

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C5904 pdf
Power Transistors
2SC5904
Silicon NPN triple diffusion mesa type
For Horizontal deflection output for TV, CRT monitor
Features
High breakdown voltage (VCBO 1 700 V)
High-speed switching (tf < 200 nsec)
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 700
1 700
600
7
8
17
27
65
3.5
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
V
A
A
A
W
°C
°C
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
TOP-3E-A1 Package
Marking Symbol: C5904
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 8.5 A
IC = 8.5 A, IB = 2.13 A
IC = 8.5 A, IB = 2.13 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 8.5 A, Resistance loaded
IB1 = 2.13 A, IB2 = −4.25 A
50 µA
1 mA
50 µA
5 12
3V
1.5 V
3 MHz
3.0 µs
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
SJD00305AED
1


Panasonic Electronic Components Datasheet

C5904 Datasheet

2SC5904

No Preview Available !

C5904 pdf
2SC5904
PC Ta
100 (1) TC = Ta
90
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
80
70
60
(1)
50
40
30
20
10 (2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
Safe operation area
100
ICP t = 100 µs
10 IC
t=
10 ms
t=
1 ms
1 DC
Safe operation area (Horizontal operation)
35
f = 64 kHz, TC < 90°C
A.S.O for the single
30 pulse load caused by
EHT flash over during
horizontal operation.
25
20
101
102
Non repetitive pulse
103 TC = 25°C
1 10
100
1 000
Collector-emitter voltage VCE (V)
15
10
5
< 1 mA
0
0 500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
2 SJD00305AED


Part Number C5904
Description 2SC5904
Maker Panasonic Semiconductor
Total Page 3 Pages
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C5904 pdf
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