s
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5.
High breakdown voltage (VCBO ≥ 1 700 V).
High-speed switching (tf < 200 nsec).
Wide safe operation area.
Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
Collector-base voltage (Emitter open) VCBO
1 700
V
e e) Collector-emitter voltage (E-B short) VCES
1 700
V
c t.
Power Transistors
2SC5904
Silicon NPN triple diffusion mesa type
For Horizontal deflection output for TV, CRT monitor ■ Features
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage (VCBO ≥ 1 700 V)
• High-speed switching (tf < 200 nsec)
• Wide safe operation area
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
Collector-base voltage (Emitter open) VCBO
1 700
V
e e) Collector-emitter voltage (E-B short) VCES
1 700
V
c typ Collector-emitter voltage (Base open) VCEO
600
3.3±0.3
5.5±0.3
V
n d stage. tinued Emitter-base voltage (Collector open) VEBO
7
(2.