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Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type darlington
For power amplification Complementary to 2SB0949 and 2SB0949A
• High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
16.7±0.3 0.7±0.1
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Unit: mm
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
7.5±0.2
■ Features
φ 3.1±0.1
4.2±0.2
Solder Dip (4.0)
14.0±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.0 150 −55 to +150 °C °C V A A W V Unit V
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
0.8±0.1
2.54±0.3 5.08±0.
D1275A Datasheet
