q q q
16.2±0.5 12.5 3.5 Solder Dip
High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 200 150 200 5 10 6 60 3 150.
55 to +150 Unit V
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
emitter voltage 2SD1457.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D1457. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.0±0.3 11.0±0.2 www.DataSheet4U.com Unit: mm 5.0±0.2 3.2...
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plification 15.0±0.3 11.0±0.2 www.DataSheet4U.com Unit: mm 5.0±0.2 3.2 s Features q q q 16.2±0.5 12.5 3.5 Solder Dip High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 200 5 10 6 60 3 150 –55 to +150 Unit V 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.1±0.1 5.45±0.3 10.9±0.
D1457 Datasheet
