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Panasonic Electronic Components Datasheet

D2139 Datasheet

2SD2139

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Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
For high-current amplification ratio, power amplification
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
80
60
6
6
3
1
15
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
min typ max Unit
100 µA
100 µA
100 µA
60 V
500 2500
1V
50 MHz
*hFE Rank classification
Rank
Q
P
O
hFE 500 to 1000 800 to 1500 1200 to 2500
1
Free Datasheet http://www.nDatasheet.com


Panasonic Electronic Components Datasheet

D2139 Datasheet

2SD2139

No Preview Available !

Power Transistors
PC — Ta
20
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=40
30
10
TC=100˚C
3
1
–25˚C
0.3
0.1
0.03 25˚C
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
1.2
IB=1.6mA TC=25˚C
1.4mA
1.0 1.2mA
1.0mA
0.8 0.8mA
0.6mA
0.6
0.4mA
0.4
0.2 0.2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2139
IC — VBE
6
VCE=4V
5
4
3
TC=100˚C
2
25˚C
1
–25˚C
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
10000
3000
1000
300
100
hFE — IC
VCE=4V
TC=100˚C
25˚C
–25˚C
30
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=12V
f=10MHz
TC=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3 t=10ms
IC
DC
1
1ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
Free Datasheet http://www.nDatasheet.com


Part Number D2139
Description 2SD2139
Maker Panasonic Semiconductor
Total Page 3 Pages
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