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Panasonic Electronic Components Datasheet

D2242 Datasheet

2SD2242

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Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD2242
base voltage 2SD2242A
VCBO
60
80
Unit
V
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
Collector to 2SD2242
emitter voltage 2SD2242A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
80
5
8
4
15
2
150
–55 to +150
V
V
A
A
W
˚C
˚C
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2242
current
2SD2242A
Collector cutoff
2SD2242
current
2SD2242A
Emitter cutoff current
Collector to emitter 2SD2242
voltage
2SD2242A
Forward current transfer ratio
Base to emitter voltage
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VBE
Collector to emitter saturation voltage VCE(sat)
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
min
60
80
1000
2000
E
typ max
200
200
500
500
2
Unit
µA
µA
mA
V
10000
2.5 V
2
V
4
20 MHz
0.5 µs
4 µs
1 µs
1
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Panasonic Electronic Components Datasheet

D2242 Datasheet

2SD2242

No Preview Available !

www.DataSheet.co.kr
Power Transistors
PC — Ta
20
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
10
TC=25˚C
8
IB=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
6 1.5mA
1.0mA
0.5mA
4
2
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SD2242, 2SD2242A
IC — VBE
10
VCE=3V
8
25˚C
6
TC=100˚C –25˚C
4
2
0
0 0.8 1.6 2.4 3.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=250
30
10
3
1 TC=100˚C
–25˚C
0.3
0.1
25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
105
VCE=3V
TC=100˚C
104 25˚C
–25˚C
103
102
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
IC
3
1
t=1ms
10ms
DC
1000
100
10
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
0.3
0.1 1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
0.1
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2
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Part Number D2242
Description 2SD2242
Maker Panasonic Semiconductor
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D2242 Datasheet PDF





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