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D2242 - 2SD2242

Key Features

  • 13.0±0.2 4.2±0.2 q q q 2.5±0.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2242 2SD2242A 2SD2242 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip Ratings 60 80 60 80 5 8 4 15 2 150.
  • 55 to +150 Unit V 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 emitter voltage 2SD2242A Emitter to base voltage Pea.

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Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features 13.0±0.2 4.2±0.2 q q q 2.5±0.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2242 2SD2242A 2SD2242 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip Ratings 60 80 60 80 5 8 4 15 2 150 –55 to +150 Unit V 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.